Adjusting program and erase voltages in a memory device

ABSTRACT

A method and apparatus for adjusting threshold program and erase voltages in a memory array, such as a floating gate memory array, for example. A method includes applying a first voltage level to a first edge word line of a memory block string and applying a second voltage level to a second edge word line of the memory block string. The method might also include applying a third voltage level to non-edge word lines of the memory block string.

BACKGROUND

1. Field of the Invention

Embodiments of the present invention relate generally to memory devicesand, more particularly, in one or more embodiments, to adjusting erasevoltages in memory devices.

2. Description of the Related Art

Processor-based systems, such as computers, typically include one ormore memory devices to provide storage capability for the system. Systemmemory is generally provided in the form of one or more integratedcircuit chips or devices and generally includes both random accessmemory (RAM) and read-only memory (ROM). System RAM is typically largeand volatile and provides the system's main memory. Static RAM andDynamic RAM are commonly employed types of random access memory. Incontrast, system ROM is generally small and includes non-volatile memoryfor storing initialization routines and identification information.Electrically-erasable read only memory (EEPROM) is one commonly employedtype of memory, wherein an electrical charge may be used to programand/or erase data in the memory.

One type of non-volatile memory that is of particular use is a flashmemory. A flash memory is a type of EEPROM that can be erased andreprogrammed in blocks. Flash memory is often employed in personalcomputer systems in order to store the Basic Input Output System (BIOS)program such that it can be easily updated. Flash memory is alsoemployed in wireless electronic devices, because it enables themanufacturer to support new communication protocols as they becomestandardized and provides the ability to remotely upgrade the device forenhanced features.

Flash memory includes a memory array having a large number of memorycells arranged in “rows” and “columns”. The memory cells are generallygrouped into pages which may be programmed simultaneously. Additionally,the pages are grouped into blocks and the cells within a block may allbe erased simultaneously. Each of the memory cells includes a memorycell with a charge storage node, such as a floating-gate field-effecttransistor capable of holding a charge. Other charge storage nodes couldinclude, for example, charge trapping layers and the like. Floating gatememory cells differ from standard MOSFET designs in that they include anelectrically isolated gate, referred to as the “floating gate,” inaddition to the standard control gate. The floating gate is generallyformed over the channel and separated from the channel by a gate oxide.The control gate is formed directly above the floating gate and isseparated from the floating gate by another thin oxide layer. A floatinggate memory cell stores information by holding electrical charge withinthe floating gate. By adding or removing charge from the floating gate,the threshold voltage of the cell changes, thereby defining whether thismemory cell is programmed or erased.

A NAND flash memory device is a common type of flash memory device, socalled for the logical form in which the basic memory cell configurationis arranged. Typically, the array of memory cells for NAND flash memorydevices is arranged such that the control gate of each memory cell of arow of the array is connected to a select line, which is often referredto as a word line. Columns of the array include strings (often termedNAND strings) of memory cells connected together in series, source todrain, between a pair of select lines, a source select line and a drainselect line. The source select line includes a source select gate ateach intersection between a NAND string and the source select line, andthe drain select line includes a drain select gate at each intersectionbetween a NAND string and the drain select line. The select gates aretypically field-effect transistors. Each source select gate is connectedto a source line, while each drain select gate is connected to atransfer line, which is often referred to as a bit line.

The memory array is accessed by a row decoder activating a row of memorycells by selecting the word line connected to a control gate of a memorycell. In addition, the word lines connected to the control gates ofunselected memory cells of each string are driven to operate theunselected memory cells of each string as pass transistors, so that theypass current in a manner that is unrestricted by their stored datavalues. Current then flows from the source line to the bit line througheach NAND string via the corresponding select gates, restricted only bythe selected memory cells of each string. This places thecurrent-encoded data values of the row of selected memory cells on thebit lines.

As mentioned above, memory cells may be programmed on a page basis anderased on a block basis. However, memory cells adjacent to the selectgates (referred to as “edge memory cells”) have shown slower program anderase times than other memory cells. This is due in part to the edgecells having a low coupling ratio with the source or drain select gatesto which they are adjacent and a higher coupling ratio with thesubstrate. Additionally, the coupling ratio of the edge memory cellswith the select gates is inconsistent due to misalignment between thememory cells. The misalignment occurs during processes commonly used tomanufacture the floating gate memory devices. Additionally, where blocksare manufactured in block pairs, i.e., even and odd blocks, is themisalignment is generally different between the first block and thesecond block of the block pair. The variance in program and erase timescaused by the misalignment of the memory cells is generally undesirable.

Embodiments of the present invention may be directed to one or more ofthe problems set forth above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a block diagram of a processor-based device having amemory that includes memory devices fabricated in accordance withembodiments of the present invention;

FIG. 2 illustrates a block diagram of a memory device having a memoryarray fabricated in accordance with embodiments of the presentinvention;

FIG. 3 is schematic diagram of a NAND flash memory array having memorycells fabricated in accordance with embodiments of the presentinvention;

FIG. 4 is a cross-sectional view of a paired NAND string having even andodd blocks in accordance with embodiments of the present invention;

FIG. 5 is a cross-sectional view of a paired NAND string having even andodd blocks that have inconsistent select gate to memory cell spacing inaccordance with embodiments of the present invention; and

FIG. 6 illustrates a technique for applying erase voltages to memorycells in accordance with embodiments of the present invention.

DETAILED DESCRIPTION

Turning now to the drawings, and referring initially to FIG. 1, a blockdiagram depicting a processor-based system, generally designated byreference numeral 10, is illustrated. The system 10 may be any of avariety of types such as a computer, pager, cellular phone, personalorganizer, control circuit, etc. In a typical processor-based device, aprocessor 12, such as a microprocessor, controls the processing ofsystem functions and requests in the system 10. Further, the processor12 may comprise a plurality of processors that share system control.

The system 10 typically includes a power supply 14. For instance, if thesystem 10 is a portable system, the power supply 14 may advantageouslyinclude permanent batteries, replaceable batteries, and/or rechargeablebatteries. The power supply 14 may also include an AC adapter, so thesystem 10 may be plugged into a wall outlet, for instance. The powersupply 14 may also include a DC adapter such that the system 10 may beplugged into a vehicle cigarette lighter, for instance.

Various other devices may be coupled to the processor 12 depending onthe functions that the system 10 performs. For instance, a userinterface 16 may be coupled to the processor 12. The user interface 16may include buttons, switches, a keyboard, a light pen, a mouse, and/ora voice recognition system, for instance. A display 18 may also becoupled to the processor 12. The display 18 may include an LCD display,a CRT, LEDs, and/or an audio display, for example.

Furthermore, an RF sub-system/baseband processor 20 may also be coupledto the processor 12. The RF sub-system/baseband processor 20 may includean antenna that is coupled to an RF receiver and to an RF transmitter(not shown). A communications port 22 may also be coupled to theprocessor 12. The communications port 22 may be adapted to be coupled toone or more peripheral devices 24 such as a modem, a printer, acomputer, or to a network, such as a local area network, remote areanetwork, intranet, or the Internet, for instance.

Because the processor 12 controls the functioning of the system 10 byimplementing software programs, memory is used to enable the processor12 to be efficient. Generally, the memory is coupled to the processor 12to store and facilitate execution of various programs. For instance, theprocessor 12 may be coupled to system memory 26, which may includevolatile memory, such as Dynamic Random Access Memory (DRAM) and/orStatic Random Access Memory (SRAM). The system memory 26 may alsoinclude non-volatile memory, such as read-only memory (ROM), EEPROM,and/or flash memory to be used in conjunction with the volatile memory.As described further below, the system memory 26 may include one or morememory devices, such as flash memory devices, that may include afloating gate memory array fabricated in accordance with embodiments ofthe present invention.

A block diagram illustrating a flash memory device 30 that may beincluded as a portion of the system memory 26 of FIG. 1 is illustratedin FIG. 2. As will be described further below with respect to FIG. 3,the flash memory device 30 may be a NAND flash memory device. The flashmemory device 30 generally includes a memory array 32. The memory array32 generally includes many rows and columns of conductive tracesarranged in a grid pattern to form a number of memory cells. The senselines that make up the memory array 32 are generally referred to as“word lines”, rows or row lines. The “transfer lines” are generallyreferred to as “bit lines”, “digit lines”, columns or column lines Thesize of the memory array 32 (i.e., the number of memory cells) will varydepending on the size of the flash memory device 30.

To access the memory array 32, a row decoder block 34 and a columndecoder block 36 are provided and are configured to receive andtranslate address information from the processor 12 via the address bus38 to access a particular memory cell in the memory array 32. A senseamplifier block 40 having a plurality of the sense amplifies is alsoprovided between the column decoder 36 and the memory array 32 to senseand amplify individual values stored in the memory cells. Further, a rowdriver block 42 is provided between the row decoder block 34 and thememory array 32 to activate selected word lines in the memory arrayaccording to a given row address.

During read and write operations, data may be transferred to and fromthe flash memory device 30 via the data bus 44. The coordination of thedata and address information may be conducted through a data controlcircuit block 46. Finally, the flash memory device 30 may include acontrol circuit 48 configured to receive control signals from theprocessor 12 via the control bus 50. The control circuit 48 is coupledto each of the row decoder block 34, the column decoder block 36, thesense amplifier block 40, the row driver block 42 and the data controlcircuit block 46, and is generally configured to coordinate timing andcontrol among the various circuits in the flash memory device 30.

An embodiment of the memory array 32 of FIG. 2 is illustrated in FIG. 3.In the present embodiment, the memory array 32 comprises a NAND memoryarray 52. The NAND memory array 52 includes word lines WL(0)-WL(M) andintersecting local bit lines BL(0)-BL(M). As will be appreciated, forease of addressing in the digital environment, the number of word linesWL and the number of bit lines BL are each a power of two (e.g., 256word lines WL by 4,096 bit lines BL). The local bit lines BL are coupledto global bit lines (not shown) in a many-to-one relationship.

The NAND memory array 52 includes a floating gate transistor 54 locatedat each intersection of a word line WL and a local bit line BL. Thefloating gate transistors 54 serve as non-volatile memory cells forstorage of data in the NAND memory array 52, as previously described. Aswill be appreciated, each floating gate transistor includes a source, adrain, a floating gate, and a control gate. The control gate of eachfloating gate transistor 54 is coupled to a respective word line WL. Thefloating gate transistors 54 are connected in series, source to drain,to form a NAND string 56 formed between gate select lines. Specifically,the NAND strings 56 are formed between the drain select line GS(D) andthe source select line GS(S). The drain select line GS(D) is coupled toeach NAND string 56 through a respective drain select gate 58.Similarly, the source select line GS(S) is coupled to each NAND string56 through a respective source select gate 60. The drain select gates 58and the source select gates 60 may each comprise a field-effecttransistor (FET), for instance. A column of the memory array 52 includesa NAND string 56 and the source select gate 60 and drain select gate 58connected thereto. A row of the floating gate transistors 52 are thosetransistors commonly coupled to a given word line WL.

The source of each source select gate 60 is connected to a common sourceline CSL. The drain of each source select gate is coupled to the sourceof a floating gate transistor 54 in a respective NAND string 56. Thegate of each source select gate 60 is coupled to the source select lineGS(S).

The drain of each drain select gate 58 is connected to a respectivelocal bit line BL for the corresponding NAND string 56. The source ofeach drain select gate 58 is connected to the drain of a floating gatetransistor 54 of a respective NAND string 56. Accordingly, asillustrated in FIG. 3, each NAND string 56 is coupled between arespective drain select gate 58 and source select gate 60. The gate ofeach drain select gate 58 is coupled to the drain select line GS(D).

Differential voltages across the word lines alter the charge in thefloating gates to program or erase the memory cells. Specifically, inprogramming the memory cells, a voltage is applied to the control gatewhile a program or inhibit voltage is applied to the bit lines. Thevoltage applied to the control gate may be between 15 and 20 volts, forexample. Alternatively, during an erase operation the substrate israised to a high voltage, such as 20 volts, for example, while the wordlines are coupled to ground or a low voltage, i.e. 1.5 volts or less.The source select and drain select gates are left floating during theerase operation, so that electrons flow out of the floating gate andinto the substrate.

As mentioned above, the edge memory cells (i.e., the memory cellsadjacent to the select gates) have shown slower program and erase timesthan other memory cells in a typical memory array due in part to theedge cells having a low coupling ratio with the select gates and ahigher coupling ratio with the substrate tub. FIG. 4 is across-sectional view of a paired NAND string 70. Each floating gatetransistor in the paired NAND string 70 generally includes a gatedielectric 62, such as silicon dioxide (SiO₂). Each floating gatetransistor also includes an isolated floating gate 64, which maycomprise polysilicon, for example. As previously discussed, eachfloating gate transistor also includes a control gate 66, which may beformed of a single conductive layer, such as polysilicon. Because of theconfiguration and operation of the memory array, each of the floatinggate transistors in a single word line WL may share a common controlgate 66. The floating gates 64 and control gate 66 are electricallyisolated from one another by an inter-gate dielectric layer 68. Theinter-gate dielectric layer 68 may comprise SiO₂ or SiN_(x), forexample.

The paired NAND string 70 includes an even block 72 and an odd block 74,each having source select gates 76 and 82, respectively, and drainselect gates 78 and 80, respectively. The even and odd word linesWL(0)-WL(M) are located in between the select gates 76 and 78 in theeven block 72 and select gates 80 and 82 in the odd block 74. Asdiscussed above, a program voltage is applied to the control gate 66 toprogram the memory cells, while an erase voltage is applied to thesubstrate 84 during an erase operation. However, the program and erasetimes for the memory cells may vary. In particular, the memory cells ofthe edge word lines may be slower during both the program and eraseoperations.

The slower program and erase of edge word lines may be due, in part, tomisalignment of the edge word lines with respect to select gates duringthe manufacturing processes. FIG. 5 illustrates a cross-sectional viewof a paired NAND string 90 where such misalignment has occurred. Similarto the paired NAND string 70 of FIG. 4, the paired NAND string 90 hasboth an even block 92 and an odd block 94. The even block 92 has asource select gate 96 and a drain select gate 98, and the odd block 94has a drain select gate 100 and a source select gate 102. The word linesare located in between the select gates 96, 98, 100 and 102 of the evenand odd blocks 92 and 94.

As illustrated in FIG. 5, the WL(0) of the even block, which is referredto hereinafter as the “even WL(0)”, has been misaligned so that it islocated a distance A from the source select gate 96, while the WL(M) ofthe even block (which is referred to hereinafter as the “even WL(M)”) islocated a distance B from the even select gate 98. Similarly, the WL(M)of the odd block, which is referred to herinafter as the “odd WL(M)”,has been misaligned relative to the drain select gate 100 so that theyare a distance C apart and the WL(0) of the odd block, which is referredto hereinafter as the “odd WL(0)”, is located a distance D from thesource select gate 102. In this example, the distances A and C areapproximately equal and less than the distances B and D, which are alsoapproximately equal. Because of the misalignment, the coupling ratio ofthe edge memory cells with the select gates is inconsistent between theeven and odd NAND strings 92 and 94, exacerbating an existinginconsistency in the program and erase times for the memory cells.

In order to compensate for the slower program and erase times of theedge word lines, different voltage levels may be applied to adjust anerase voltage threshold V_(t) for memory cells of edge word lines. Thus,the differential voltage between the memory cells and the substrate 84can vary across the memory cells of the NAND string 70. In the case of aprogram operation where the distance A between the even WL(0) and thesource select gate 96 is less than the distance B between the even WL(M)and the drain select gate 98, the program voltage V_(pg) of the evenWL(0) may be set to be greater than the program voltage V_(pg) of theeven WL(M). Similarly, the program voltage V_(pg) for the odd WL(M) maybe set to be greater than the program voltage V_(pg) from the odd WL(0).Additionally, the program voltage V_(pg) for the even WL(0) may be equalto or greater than the program voltage V_(pg) of the odd WL(M), and theprogram voltage V_(pg) for the odd WL(0) may be greater than or equal tothe program voltage V_(pg) for the even WL(M).

Thus, the following relationship is established for the respectiveprogram voltages when the distance A is less than the distance B: V_(pg)for even WL(0)≧V_(pg) for odd WL(M)>V_(pg) for odd WL(0)≧V_(pg) for evenWL(M). In the event that the even WL(0) is closer to the source selectgate 96 than the even WL(M) is to the drain select gate 98, therespective voltage may be: V_(pg) for even WL(0)=16.8; V_(pg) for oddWL(M)=16.6; V_(pg) for even WL(M) 16.0; V_(pg) for odd WL(0)=16.2.Alternatively, if the distance A is greater than the distance B, therelationship between the various program voltages may be: V_(pg) for oddWL(0)≧V_(pg) for even WL(M)>V_(pg) even WL(0)≧V_(pg) for odd WL(M).

Providing the multiple program voltages levels allows for word linespecific adjustments to the program speeds of the memory cells to reducethe variability in program times of the memory cells. Various voltagelevels may also be implemented for erase operations to reduce thevariability in erase times of the memory cells.

As mentioned above, during an erase operation, a high voltage is appliedto the substrate and, generally, the control gate is coupled to areference potential, such as ground. However, in order to provide moreconsistent erase times for memory cells within a block, erase voltagesmay be applied to the control gates. The application of different erasevoltages to the control gates adjusts the erase voltage threshold V_(t)and helps to compensate for misalignment of the memory cells relative tothe select gates. The voltages applied may range from approximately 0volts to approximately 2.5 volts. For example, for erasure of the memorycells of the even NAND string 92, when the distance A is less than thedistance B, the erase voltage applied to the even WL(0) may be zerovolts, the erase voltage applied to the even WL(M) may be 0.5 volts, andthe erase voltage applied to even WL(1)-WL(M−1) may be 1.5 volts.Because the distance C is approximately equal to the distance A, theerase voltage level applied to the odd WL(M) may be approximately thesame as that applied to the even WL(0) (i.e., zero volts), while theerase voltage applied to the odd WL(0) may be equal to the erase voltageapplied to the even WL(M) (i.e., 0.5 volts). In both the even and oddblock strings 92 and 94, the erase voltage levels applied to the edgememory cells coupled to WL(0) and WL (M) are less than the erase voltagelevels applied to the other memory cells in the respective NAND blockstrings 92 and 94.

In implementing the different program and erase voltages for the edgeword lines, the voltage levels should be determined based on thephysical characteristics of the blocks and not logical associations withother memory cell. In particular, NAND memory arrays may include asection of odd and even memory block strings that are configured to beused in the event of failure of a memory block strings that arecurrently in use. These redundant even and odd blocks may be assigned toreplace either even or odd blocks and, as a result, may be logicallyassociated with a block that is physically different than the redundantblock. Specifically, for example, a redundant even block may replace anodd block. Where the redundant even block is being used to replace anodd block, the program and erase voltage levels for even blocks will beused, even though logically the memory cell may be associated orrecognized as an odd block. Similarly, a physical odd block used toreplace a logical even block would use the program and erase voltagesfor a physical odd block, not an even block. Thus, the voltagesimplemented are consistent based on the physical characteristics of theblocks.

In view of the foregoing, a flow chart illustrating an exemplarytechnique for applying program and erase voltages to memory cells of afloating gate memory array is shown in FIG. 6 and generally referred toby the reference numeral 110. The technique 110 begins by determiningwhether the memory cells are misaligned, as indicated at block 112. Thisdetermination may be performed in several ways. For example, inaccordance with one technique, misalignment may be determined based onthe relative program and erase times of the edge lines in the odd andeven blocks. Specifically, if the even word line WL(0) is erasingapproximately as fast as the odd word line WL(M) and both are erasingfaster than the even word line WL(M) and the odd word line WL(0), thenit may indicate that there is a misalignment. The sense amplifier block40 of FIG. 2 may be used to obtain information in this regard.Specifically, the sense amplifier block 40 may determine whether anerase or program operation has been successful for all the word lines ina block and whether the operation needs to be performed again forparticular word line. This information can be used to determine whetherthe blocks are exhibiting signs characteristic of a misalignment. If itis determined that the memory cells are not misaligned, then standardvoltages may be used, as indicated at block 114.

Alternatively, however, if it is determined that the memory cells aremisaligned, word line specific voltages may be determined to perform theprogram and erase operation, as indicated at block 116. Thedetermination of specific voltages for the program and erase operationsmay be determined based on the specific characteristics of theparticular memory array or, alternatively, the voltages may bedetermined based on average effective erase and program voltages used insimilar memory cells. For example, the specific voltages for the programand erase operations may be set by applying an algorithm to the dataretrieved by the sense amplifiers 40 that can adjust the program anderase voltages to optimal levels. Alternatively, the voltage levels forodd and even blocks may be programmed in advance and once it isdetermined that the memory cells are misaligned, the programmed voltagelevels are used. Regardless, in setting the program and erase voltages,edge word lines WL(0) and WL(M) in the even and odd blocks should becorrelated as set forth above. For example, for the erase operation, theeven WL(0) and the odd WL (M) erase voltages may be set equal to eachother and the odd WL (0) and even WL (M) erase voltages may be set equalto each other.

After the appropriate voltage levels have been determined, the programand erase voltages are set, as indicated at block 118, and the memoryarray may be used. In accordance with one embodiment, if the edge wordlines WL(0) and WL(M) continue to exhibit slower program and erasetimes, the voltage levels may be determined again, as indicated by arrow120.

While embodiments of the invention may be susceptible to variousmodifications and alternative forms, specific embodiments have beenshown by way of example in the drawings and have been described indetail herein. However, it should be understood that the invention isnot intended to be limited to the particular forms disclosed. Rather,embodiments of the invention are to cover all modifications,equivalents, and alternatives falling within the spirit and scope ofthese embodiments, as defined by the following appended claims.

1. A method of erasing memory cells comprising: applying a first voltagelevel to a control gate of a first edge memory cell of a string;applying a second voltage level to a control gate of a second edgememory cell of the string; and applying a third voltage level to acontrol gate of at least one non-edge memory cell of the string.
 2. Themethod of claim 1, wherein the third voltage level is greater than thefirst and second voltage levels.
 3. The method of claim 1, wherein thefirst voltage level is approximately 0 volts, and the second and thirdvoltage levels are each between approximately 0.5 volts and 2.5 volts.4. The method of claim 1, wherein the first and second voltage levelsare determined based upon the distance between the control gates of thefirst edge memory cell and the second edge memory cell to select gatesof the string.
 5. The method of claim 1, wherein the first edge memorycell and the second edge memory cell of the string are part of a firstblock in a pair of blocks, wherein the first edge memory cell isadjacent to a source select gate of the first block and the second edgememory cell is adjacent to a drain select gate of the first block. 6.The method of claim 5, wherein applying the first voltage level to thecontrol gate of the first edge memory cell comprises applying the firstvoltage level to a control gate of a first edge memory cell of a secondblock in the pair of blocks, and wherein applying the second voltagelevel to the control gate of the second edge memory cell comprisesapplying the second voltage level to a control gate of a second e memorycell of the second block.
 7. The method of claim 6, wherein the firstedge memory cell of the second block is adjacent to a drain select gateof the second block and the second edge memory cell of the second blockis adjacent to a source select gate of the odd block string.
 8. A methodof operating a memory array comprising: applying a first program voltageto a control gate of a first memory cell adjacent to a select gate of afirst block of memory cells of a pair of blocks and applying a secondprogram voltage to a control gate of a memory cell adjacent to a selectgate of a second block of memory cells of the pair of blocks, whereinthe first program voltage is greater than or equal to the second programvoltage.
 9. The method of claim 8, comprising applying a third programvoltage to a control gate of an other memory cell of the first block,wherein the other memory cell of the first block is adjacent to an otherselect gate of the first block, and wherein the third voltage is lessthan the first voltage level.
 10. The method of claim 9, comprisingapplying a fourth program voltage to a control gate of an other memorycell of the second block, wherein the other memory cell of the secondblock is adjacent to an other select gate of the second block, andwherein the fourth voltage is less than or equal to the third programvoltage.
 11. A method for configuring a memory array comprising:determining a plurality of voltage levels to apply to control gates ofthe memory array; setting the voltages levels to be applied to thecontrol gates; and determining if the memory cells in the memory arrayare misaligned using data gathered from a sense block.
 12. The method ofclaim 11, wherein determining voltage levels to apply to control gatescomprises using data gathered from a sense block.
 13. The method ofclaim 11, wherein determining the voltage levels to apply to the controlgates comprises retrieving data from a memory location.
 14. The methodof claim 11, wherein setting the voltage levels comprises settingvoltages for the word lines of first and second blocks of a pair ofblocks of a NAND array.
 15. The method of claim 11, wherein the voltagesare program voltages for programming the memory cells of the memoryarray and they are set according to the following pattern: (V_(pg) foreven WL(0)≧V_(pg) for odd WL(M))>(V_(pg) for odd WL(0)≧V_(pg) for evenWL(M)).
 16. The method of claim 11, wherein the voltages are programvoltages for programming the memory cells of the memory array and theyare set according to the following: (V_(pg) for odd block WL(0)≧V_(pg)for even block WL(M))>(V_(pg) even WL(0)≧V_(pg) for odd block WL(M)).